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Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories

Published online by Cambridge University Press:  28 June 2011

J. Amouroux ,
V. Della Marca ,
E. Petit ,
D. Deleruyelle ,
M. Putero ,
Ch. Muller ,
P. Boivin ,
E. Jalaguier ,
J-P. Colonna  and
P. Maillot
...Show all authors
J. Amouroux
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France. Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France. CEA LETI/MINATEC, 17 Rue des Martyrs, F-38054 Grenoble Cedex, France.
V. Della Marca
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France. Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France. CEA LETI/MINATEC, 17 Rue des Martyrs, F-38054 Grenoble Cedex, France.
E. Petit
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France. Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France.
D. Deleruyelle
Affiliation:
Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France.
M. Putero
Affiliation:
Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France.
Ch. Muller
Affiliation:
Im2np, Institut Matériaux Microélectronique et Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex 20, France.
P. Boivin
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France.
E. Jalaguier
Affiliation:
CEA LETI/MINATEC, 17 Rue des Martyrs, F-38054 Grenoble Cedex, France.
J-P. Colonna
Affiliation:
CEA LETI/MINATEC, 17 Rue des Martyrs, F-38054 Grenoble Cedex, France.
P. Maillot
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France.
L. Fares
Affiliation:
STMicroelectronics, 190 Avenue Célestin Coq, F-13106 Rousset Cedex, France.
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Abstract

Non-Volatile Memories (NVM) integrating silicon nanodots (noted SDs) are considered as an emerging solution to extend Flash memories downscaling. In this alternative memory technology, silicon nanocrystals act as discrete traps for injected charges.

Si-dots were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on top of tunnel oxide. Depending on the pre-growth surface treatment, tunnel oxide surface may present either siloxane or silanol groups. SDs deposition relies on a 2–steps process: nucleation by SiH4 and selective growth with SiH2Cl2.

In a context of technological industrialization, it is of primary importance to develop in-line metrology tools dedicated to Si-dots growth process control. Hence, silicon-dots were observed in top view by using an in-line Critical Dimension Scanning Electron Microscopy CDSEM and their average size and density were extracted from image processing. In addition, Haze measurement, generally used for bare silicon surface characterization, was customized to quantify Si-dots deposition uniformity over the wafer. Finally, Haze value was correlated to Si nanodots density and size determined by CDSEM.

Keywords

crystal growthmorphologymemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q01-04
Copyright
Copyright © Materials Research Society 2011

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References

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