Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T08:37:01.352Z Has data issue: false hasContentIssue false

Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4

Published online by Cambridge University Press:  31 January 2011

Mihaela Popovici
Affiliation:
Mihaela.Ioana.Popovici@imec.be, IMEC vzw, Heverlee, Belgium
Sven Van Elshocht
Affiliation:
Sven.VanElshocht@imec.be, IMEC vzw, Heverlee, Belgium
Nicolas Menou
Affiliation:
nicolas.menou@imec.be, IMEC vzw, Heverlee, Belgium
Johan Swerts
Affiliation:
johan.swerts@imec.be, ASM Belgium, Heverlee, Belgium
Dieter Pierreux
Affiliation:
Dieter.Pierreux@imec.be, ASM Belgium, Heverlee, Belgium
Annelies Delabie
Affiliation:
Annelies.Delabie@imec.be, IMEC vzw, Heverlee, Belgium
Karl Opsomer
Affiliation:
Karl.Opsomer@imec.be, IMEC vzw, Heverlee, Belgium
Bert Brijs
Affiliation:
Bert.Brijs@imec.be, IMEC vzw, Heverlee, Belgium
Gerrit Faelens
Affiliation:
Gerrit.Faelens@imec.be, IMEC vzw, Heverlee, Belgium
Alexis Franquet
Affiliation:
Alexis.Franquet@imec.be, IMEC vzw, Heverlee, Belgium
Thierry Conard
Affiliation:
Thierry.Conard@imec.be, IMEC vzw, Heverlee, Belgium
Jan Maes
Affiliation:
Jan.Maes@imec.be, ASM Belgium, Heverlee, Belgium
Dirk Wouters
Affiliation:
Dirk.Wouters@imec.be, IMEC vzw, Heverlee, Belgium
Jorge Kittl
Affiliation:
Jorge.Kittl@imec.be, IMEC vzw, Heverlee, Belgium
Get access

Abstract

Strontium titanate (STO) thin films (45-67 % Sr) were deposited by atomic layer deposition using Sr(tBu3Cp)2/Ti(OMe)4/H2O as precursors. The Sr content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering spectroscopy (RBS). The amount of Sr and Ti deposited depends on the Sr:Ti pulse ratio and indicates the enhancement of the Ti precursor reactivity in the presence of Sr-OH. STO compositions that are closer to stoichiometric SrTiO3 result in denser films with correspondingly higher index of refraction. The increase (decrease) of the Sr content over (below) 50 % leads to an expansion (contraction) of the lattice parameter corresponding to cubic SrTiO3 with a perovskite structure. The dielectric constant (extracted from film thickness series) and leakage current strongly depends both on the Sr content and the crystalline state of the films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kil, D.-S., Lee, J.-M., and Roh, J.-S., Chem.Vapor Depos. 8, 195 (2002).Google Scholar
2 Kosola, A., Putkonen, M., Johansson, L.-S., and Niinisto, L., Appl. Surf. Sci. 211, 102 (2003).Google Scholar
3 Kwon, O. S., Kim, S. K., Cho, M., Hwang, C. S., and Jeong, J., J. Electrochem. Soc. 152, C229 (2005).Google Scholar
4 Kwon, O. S., Lee, S. W., Ham, J. H., ad Hwang, C. S., J. Electrochem. Soc. 154, G127 (2007).Google Scholar
5 Ahn, J. H., Kang, S. W., Kim, J. Y., Kim, J. H., and Roh, J. S., J. Electrochem. Soc. 155, G185 (2008).Google Scholar
6 Lee, S.W., Han, J. H., Kwon, O.S., and Hwang, C.S., J. Electrochem. Soc. 155, G253 (2008).Google Scholar
7 Lee, S.W., Kwon, O.S., Han, J. H., and Hwang, C.S., Appl. Phys. Lett. 92, 222903 (2008).Google Scholar
8 Bhaskar, S., Allgeyer, D., and Smythe, J. A. III, Appl. Phys. Lett. 89, 254103 (2008).Google Scholar
9 Vehkamäki, M., Hatanpää, T., Hänninen, T., Ritala, M. and Leskel, M.ä, Electrochem. Solid-State Lett., 2, 504 (1999).Google Scholar
10 Vehkamaki, M., Hanninen, T., Ritala, M., Leskela, M., Sajavaara, T., Rauhala, E., and Keinonen, J., Chem.Vapor Depos. 7, 75 (2001).Google Scholar
11 Rahtu, A., Hanninen, T., and Ritala, M., J. Phys. IV, 11, 923 (2001).Google Scholar
12 Vehkamaki, M., PhD Thesis, University of Helsinki, 2007.Google Scholar
13 Hatanpaa, T., Ritala, M., and Leskela, M., J. Organomet. Chem. 692, 5256 (2007).Google Scholar
14PULSAR 3000 is a trademark of ASM International.Google Scholar
15 Clima, S., Pourtois, G., Menou, N., Popovici, M., Rothschild, A., Kaczer, B., Van Elshocht, S., Wang, X., Swerts, J., Pierreux, D., De Gendt, S., Wouters, D., and J.Kittl, A., to be published.Google Scholar