Coherently strained CdSe quantum structures are fabricated under varying dynamical growth conditions during the epitaxy of cubic CdSe on (100) ZnSe. Reflection high energy electron diffraction (RHEED) is employed to monitor the growth mode (2D vs. 3D). Conventional photoluminescence (PL) shows that both growth modes yield quantum structures with high PL efficiencies in which excitons are strongly localized by interface fluctuations at varying length scales. Spatially-resolved, near-field PL from quantum structures formed during 3D growth reveals reproducible fine structure in the PL spectrum attributed to emission from excitons laterally confined to quantum dot-like regions. Transmission electron microscopy (TEM) studies suggest that these observations result from a combination of island growth and strain-driven interdiffusion.
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