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Growth of Crystalline Silicon, Microcrystalline and Epitaxial at Low Substrate Temperature

Published online by Cambridge University Press:  25 February 2011

H. Tanabe ,
M. Azuma ,
T. Uematsu ,
H. Shirai ,
J. Hanna  and
I Shimizu
H. Tanabe
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
M. Azuma
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
T. Uematsu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
H. Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
J. Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
I Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan 227
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Abstract

Both microcrystalline and epitaxially grown Si thin films were prepared at low substrate temperature from different precursors under control of atomic hydrogen. With the precursors, SiHn (n≤3), generated by plasma-induced decomposition of Sil4, microcrystalline Si was formed through the island-like clusters with the aid of atomic hydrogen, while two-dimensional growth was caused with the precursors, SiHnFm (n+m≤3) generated from SiF4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 17
Copyright
Copyright © Materials Research Society 1989

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References

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