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Growth of Crystalline Superlattices of Aluminum Nitride/Zirconium Nitride on SI(111): Roughness and Layer Interruptions

Published online by Cambridge University Press:  21 February 2011

W. J. Meng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
J. Heremans
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
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Abstract

We report on growth of crystalline superlattices of aluminum nitride/zirconium nitride on aluminum nitride buffered Si(111) substrates. We observed increased buffer layer surface roughness as compared with the buffer/Substrate interface. This roughness in turn influences the quality of the superlattice. We report results of surface morphology examination as a function of growth rate and substrate temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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