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Growth of Cubic GaN by MBE and Its Properties

Published online by Cambridge University Press:  10 February 2011

S. Yoshida ,
H. Okumura ,
G. Feuillet ,
P. Hacke  and
K. Balakrishnan
S. Yoshida
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
H. Okumura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
G. Feuillet
Affiliation:
Commissariat a l’Energie Atomique, Centre de Grenoble, 17 rue des Matryrs, 38054 Grenoble, Cedex 9, France
P. Hacke
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
K. Balakrishnan
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
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Abstract

Molecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 173
Copyright
Copyright © Materials Research Society 1997

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References

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