Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-18T01:45:59.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Diamond Films by Plasma CVD

Published online by Cambridge University Press:  25 February 2011

Shigemi Yugo ,
Tadamsa Kimura ,
Hisayuki Kanai  and
Yoshio Adachi
Shigemi Yugo
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, JAPAN
Tadamsa Kimura
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, JAPAN
Hisayuki Kanai
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, JAPAN
Yoshio Adachi
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, JAPAN
Get access

Abstract

Growth of filmy diamond crystals has been strongly desired, and the plasma CVD is expected as one of the growth techniques which provide high quality crystalline diamond films. This study deals with the growth of uniform crystalline diamond films by means of the plasma CVD. The main stress was laid on the effects of the surface treatments of the silicon substrate and the substrate potential on composition of deposited materials as well as on the morphology of diamond crystals grown on the substrate. A mixture of methane (1%)/hydrogen with a pressure to 400 Pa was flown at a rate of 150 cc/min and was discharged by applying 200 W, 2.45 GHz microwave power. The Si substrates were heated to 850 ° C. Nuclei for the diamond crystal growth were preferentially generated on the defect sites caused by the surface treatments. With increasing the substrate potential in the negative direction, the growth of silicon carbide was observed to increase. When the substrate was positively biased, filmy diamond layers were found to be deposited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 327
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spitsyn, B.V., Bouilov, L.L. and Dejaguin, B.V., J.Cryst.Growth 52,219(1981)Google Scholar
2. Matumoto, S., Sato, Y.,Kamo, M. and Setaka, N., Jpn.J.Appl. Phys. 21,L183(1982)Google Scholar
3. kamo, M., Sato, Y., Matsumoto, S. and Setaka, N., J.Cryst.Growth 62,642(1983)Google Scholar
4. Sawabe, A. and Inuzuka, T., Appl.Phys.Lett. 46,146(1985)Google Scholar