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Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

Published online by Cambridge University Press:  10 February 2011

M. C. Hanna ,
Z. H. Lu ,
A. F. Cahill ,
M. J. Heben  and
A. J. Nozik
M. C. Hanna
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
Z. H. Lu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
A. F. Cahill
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
M. J. Heben
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
A. J. Nozik
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

GaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminscence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

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