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Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

Published online by Cambridge University Press:  11 February 2011

E. Monroy ,
N. Gogneau ,
D. Jalabert ,
F. Enjalbert ,
E. Bellet-Amalnc ,
Y. Hon ,
Le Si Dang  and
B. Daudin
E. Monroy
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
N. Gogneau
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
D. Jalabert
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
F. Enjalbert
Affiliation:
Laboratoire de Spectrométne Physique, Université Joseph Fourier, Grenoble, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
E. Bellet-Amalnc
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
Y. Hon
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
Le Si Dang
Affiliation:
Laboratoire de Spectrométne Physique, Université Joseph Fourier, Grenoble, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
B. Daudin
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs
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Abstract

Epitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L4.5
Copyright
Copyright © Materials Research Society 2003

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References

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