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Growth Properties of the Si(100) Steps: A Molecular Dynamics Study

Published online by Cambridge University Press:  21 February 2011

Christopher Roland  and
George H. Gilmer
Christopher Roland
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974.
George H. Gilmer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974.
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Abstract

We have mapped out the energy surfaces seen by a single silicon adatom over the Si(100) surface and Si(100) steps, using Molecular Dynamics methods. This identifies the most likely binding sites as well as the activation energies for diffusion over the terraces and steps. We find that only the 5e step with no rebonded atoms is a good sink for adatoms - the SA, rebonded Sb and Db steps are weak sinks. Because of a higher density of binding sites and lower activation energies for surface diffusion along die step edge, we expect mat growth at the Sb and Db steps take place much more readily man at the SA step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 217
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

(1) For sonne recent reviews, see: Griffith, J.E. and Kochanski, G-P., CRC Rev. of Solid State and Mat. Sci. 16, 255 (1990);Google Scholar
Williams, E.J.D. and Bartlett, N.C., Science and Webb, M.B., in Kinetics of Ordering and Growth at Surfaces, edited by Lagally, M. (Plenum Press, New York 1989).Google Scholar
(2) Alernand, O.L., Vanderbilt, D., Meade, R. and J.DJoannopoulos, Phys. Rev. Lett. 61, 1973 (1988).Google Scholar
(3) Chadi, D.J., Phys. Rev, Lett. 59, 1691 (1987)Google Scholar
(4) Stillinger, F. and Weber, T., Phys. Rev. B 31, 5262 (1985).Google Scholar
(5) Roland, C. and Gilmer, G.H., to be published.Google Scholar
(6) Wang, J. and Rockett, A., Phys. Rev. B 43, 12571 (1991);Google Scholar
Srivastava, D. and Garrison, B., to be published;Google Scholar
Zhang, Z., Lu, Y. and Jvledu, M, Surf. Sci. 50, L248 (1991). In this last reference, a Sdllinger-Weber potential was also used. Our activation energies differ somewhat from their values. We believe this to be due to die small system used in their simulations.Google Scholar
(7) Brocks, G., Kelly, P.J. and Car, R., Phys. Rev. Lett 66, 1729 (1991).Google Scholar
(8) Mo, Y.W., Swartzentruber, B.S., Kariotis, R., Webb, M.B., and M.GXagally, Phys. Rev. Lett. 63, 2392 (1989);Google Scholar
Mo, Y.W., Kleiner, J., Webb, M.B. and Lagally, M.G., Phys. Rev. Lett. 66, 1998 (1991).Google Scholar
(9) Schwoebel, R.L., J. Appl. Phys. 37, 3682 (1966);Google Scholar
Gilmer, G.H., Ghez, R. and Cabrera, N., J Cryst. Growth 8, 79 (1971).Google Scholar
(10) Arrott, A.S., Heinrich, B. and Purcell, S.T., in The Kinetics of Ordering and Growth at Surfaces, edited by Lagally, M.G. (Plenum Press, New York 1989).Google Scholar
(11) Some of this data was presented in: Roland, C. and GJLGilmer, Phys. Rev. Lett 67, 3188 (1991).Google Scholar
(12) These estimates assume diffusion in the channel separating dimer rows. If diffusion take place overtop of dimers, then the asymmetry is substantial.Google Scholar
(13) Hoeven, A.J., Lessinick, J.M., Dijkkamp, D., van Loenen, E.J. and Dieleman, J., Phys. Rev. Lett. 63, 1830 (1989); see also references in [1].Google Scholar