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Growth Temperature Uniformity of MBE-Grown GaAs Determined by Scanning Room Temperature Photoluminescence

Published online by Cambridge University Press:  22 February 2011

K. Stair ,
T. Bird ,
A. Moretti ,
F. Chambers  and
C. Choi-Feng
K. Stair
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
T. Bird
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
A. Moretti
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
F. Chambers
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
C. Choi-Feng
Affiliation:
Amoco Corporation, P.O. Box 3011, Naperville, IL 60566
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Abstract

We have used scanning room temperature photoluminescence to map GaAs quantum well widthsand AIGaAs barrier compositions over 2-inch and 3-inch diameter epitaxial layers grown by MBE at temperatures ranging from 600 to 700ºC. Analysis of these maps allows a nondestructive quantitative analysis of the GaAs growth rate uniformity from which we can calculate the temperature distribution during growth. We have used this technique to compare the thermal uniformity of various substrate holders designed for use in the Intevac ModGenII MBE system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 29
Copyright
Copyright © Materials Research Society 1994

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References

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