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Heat and mass transfer simulation of SiC boule growth by sublimation

Published online by Cambridge University Press:  21 March 2011

Michel Pons ,
Cecile Moulin ,
Jean-Marc Dedulle ,
Alexandre Pisch ,
Bernard Pelissier ,
Elisabeth Blanquet ,
Michail Anikin ,
Etienne Pernot ,
Roland Madar  and
Claude Bernard
...Show all authors
Michel Pons
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Cecile Moulin
Affiliation:
LETI, Commissariat à l'Energie Atomique, 38054 Grenoble Cedex 9, France
Jean-Marc Dedulle
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Alexandre Pisch
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Bernard Pelissier
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Elisabeth Blanquet
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Michail Anikin
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Etienne Pernot
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Roland Madar
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Claude Bernard
Affiliation:
Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France
Christian Faure
Affiliation:
LETI, Commissariat à l'Energie Atomique, 38054 Grenoble Cedex 9, France
Thierry Billon
Affiliation:
LETI, Commissariat à l'Energie Atomique, 38054 Grenoble Cedex 9, France
Guy Feuillet
Affiliation:
LETI, Commissariat à l'Energie Atomique, 38054 Grenoble Cedex 9, France
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Abstract

An accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H1.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 Tairov, Yu.M., Tsvetkov, V.F., J. Cryst. Growth, 43, 208 (1978).Google Scholar
2 Hobgood, D., Brady, M., Brixius, W., Fechko, G., Glass, R., Hensall, D., Jeny, J., Leonard, R., Malta, D., Müller, St. G., Tsvetkov, V., Carter, C., Mat. Sci. Forum, 338–342, 3 (2000).Google Scholar
3 Hofmann, D., Heinze, M., Winnacker, A., Durst, F., Kadinski, L., Kaufmann, P., Makarov, Y., Schäfer, M., J. Crystal Growth, 146, 214 (1995).Google Scholar
4 Pons, M., Blanquet, E., Dedulle, J.M., Garcon, I., Madar, R., Bernard, C., J. Electrochem. Soc., 143, 3727 (1996).Google Scholar
5 Karpov, S. Yu, Makarov, Yu N., Ram, M.S., Phys. Stat. Sol. (b), 202, 201 (1997).Google Scholar
6 Pons, M., Anikin, M., Dedulle, J.M., Madar, R., Chourou, K., Blanquet, E., Bernard, C., Surf. Coat. Technol., 94–95, 279 (1997).Google Scholar
7 Selder, M., Kadinski, L., Makarov, Yu N., Durst, F., Wellmann, P., Straubinger, T., Hofmann, D., Karpov, S., Ramm, M., J. Crystal Growth, 211, 333 (2000).Google Scholar
8 Pisch, A., Feraria, A.M., Chatillon, C., Blanquet, E., Pons, M., Bernard, C., Anikin, M., Madar, R., Mat.Sci.Forum, 338–342, 91 (2000).Google Scholar
9 Pons, M., Anikin, M., Chourou, K., Dedulle, J.M., Madar, R., Blanquet, E., Pisch, A., Bernard, C., Grosse, P., Faure, C., Basset, G., Grange, Y., Mat. Sci. Engn., B61/62, 18 (1999).Google Scholar
10 Ma, R.H., Chen, Q.S., Zhang, H., Prasad, V., Balkas, C.M., Yushin, N.K., J. Crystal Growth, 211, 352 (2000).Google Scholar
11 Raback, P., Yakimova, R., Syvajarvi, M., Nieminen, R., Janzen, E., Mat. Sci. Engng., B61/62, 89 (1999).Google Scholar
12 Eckstein, R., Hofmann, D., Makarov, Y., Muller, St. G., Pensl, G., Mat. Res. Symp. Proc, 423, 215 (1996).Google Scholar
13 Egorov, Yu E., Galyukov, A.O., Gurevich, S.G., Makarov, Yu N., Mokhov, E.N., Ramm, M.G., Ramm, M.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu A., Vorob'ev, A.N., Zhmakin, A.I., Mat. Sci. Forum, 264–268, 61 (1998).Google Scholar
14 Hofmann, D., Eckstein, R., Kolbl, M., Makarov, Yu N., Muller, St. G., Schmitt, E., Winnacker, A., Rupp, R., Stein, R., Volkl, J., J. Crystal Growth, 174, 669 (1997).Google Scholar
15 SiC-Sim, Cape Simulations, Inc., Newton, Ma 02181, USA, 1997.Google Scholar
16 Segal, A.S., Vorob'ev, A.N., Karpov, S.Yu., Mokhov, E.N., Ramm, M.G., Ramm, M.S., Roenkov, A.D., Vodakov, Yu.A., Makarov, Yu.N., J. Cryst.Growth, 208, 431 (2000).Google Scholar
17 Vodakov, Yu A., Roenkov, A.D., Ramm, M.G., Mokhov, E.N., Makarov, Yu. N., Phy. Stat. Sol. (b) 202, 177 (1997).Google Scholar
18 Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, D., Wellmann, O., Mat.Sci. Forum, 338–342, 31 (2000).Google Scholar
19 Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M., Arai, K., Mat.Sci. Forum, 338–342, 99 (2000).Google Scholar
20 Avrov, D.D., Bakin, A.S., Dorozhkin, S.I., Rastegaev, V.P., Tairov, Yu. M., J. Cryst. Growth, 198/199, 1011 (1999).Google Scholar
21 Karpov, S. Yu., Kulik, A.V., Zhmakin, I.A., Makarov, Yu. N., Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu. N., J. Crystal Growth, 211, (2000), 347–351.Google Scholar
22 Bubner, N., Klein, O., Philip, P., Sprekels, J., Wilmanski, K., J. Crystal Growth, 205, (2000), 294–304.Google Scholar
23 Hofmann, D., Schmitt, E., Bickermann, M., Kolbl, M., Welmann, P.J., Winnaker, A., Mater. Sci.Engng., B61/62, 48 (1999).Google Scholar
24 Oyanagi, N., Nishizawa, S., Kato, T., Yamaguchi, H., Arai, K., Mat. Sci. Forum, 338–342, 73 (2000).Google Scholar
25 Wellmann, P.J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnaker, A., J. Crystal Growth, 216, 263 (2000).Google Scholar
26 Anikin, M., Chaix, O., Pernot, E., Pelissier, B., Pons, M., Pisch, A., Bernard, C., Grosse, P., Faure, C., Grange, Y., Basset, G., Moulin, C., Madar, R., Mat. Sci. Forum, 338–342, 13 (2000).Google Scholar