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Heavily Doped Ultra-Shallow Junctions Formed by an ArF Excimer Laser

Published online by Cambridge University Press:  25 February 2011

S. Yoshioka ,
J. Wada ,
H. Saeki  and
S. Matsumoto
S. Yoshioka
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
J. Wada
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
H. Saeki
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
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Abstract

Boron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×1020 cm−3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.

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References

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