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Heteroepitaxial Self-Assembly of Higher-Complexity Structures By Combining Growth Control with Nanopatterning

Published online by Cambridge University Press:  01 February 2011

Jerrold A. Floro ,
Jennifer L. Gray ,
Surajit Atha ,
Nitin Singh ,
Dana Elzey  and
Robert Hull
Jerrold A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
Jennifer L. Gray
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Charlottesville, VA 22904
Surajit Atha
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Charlottesville, VA 22904
Nitin Singh
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Charlottesville, VA 22904
Dana Elzey
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Charlottesville, VA 22904
Robert Hull
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Charlottesville, VA 22904
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Abstract

We provide an overview of a novel self-assembly process that occurrs during GeSi/Si(001) strain-layer heteroepitaxy under conditions of limited adatom mobility. Suppression of copious surface diffusion leads to limited three-dimensional roughening in the form of pits that partially consume a thick, metastable wetting layer. The material ejected from the pits accumulates alongside, eventually forming a symmetric quantum dot molecule consisting of four islands bound to a {105}-faceted pit. These structures, which are of interest in nanologic applications, appear to arise from an intrinsic strain-relief mechanism in a relatively narrow regime of deposition conditions. An additional degree of morphological control is obtained by annealing films containing pits, before they evolve to full quantum dot molecules. Annealing promotes a one-dimensional growth instability leading to the formation of highly anisotropic grooves, bounded by long, wire-like islands. Finally, we show that patterns created in the Si substrate using a focused ion beam can control the location of quantum dot molecules, which is an additional critical step towards being able to use these structures for computing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK4.3
Copyright
Copyright © Materials Research Society 2005

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References

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