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Hg1-xCdxTe: Defect Structure Overview

Published online by Cambridge University Press:  25 February 2011

M.A. Berding ,
A. Sher  and
A.-B. Chen
M.A. Berding
Affiliation:
SRI International, Menlo Park, California 94025
A. Sher
Affiliation:
SRI International, Menlo Park, California 94025
A.-B. Chen
Affiliation:
Auburn University, Auburn, Alabama 36849–3501
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Abstract

Native point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 3
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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