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High Conductivity Gate Metallurgy for TFT/LCD's

Published online by Cambridge University Press:  10 February 2011

Peter M. Fryer
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
E. Colgan
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
E. Galligan
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
W. Graham
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. Horton
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
L. Jenkins
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. John
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
Y. Kuo
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
K. Latzko
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
F. Libsch
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
A. Lien
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. Nywening
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. Polastre
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
M. E. Rothwell
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
J. Wilson
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. Wisnieff
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
S. Wright
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
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Abstract

Amorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger diagonal displays for both notebook and desktop applications is discussed. Calculations have shown that the use of high conductivity gate metal such as aluminum or copper, together with the implementation of improved groundrules, can significantly extend today's technology. Aluminum suffers from problems with hillock formation during PECVD processing, and copper typically has poor adhesion to glass, reaction problems with silicon and other PECVD films, and difficulties in contacting it to other metals. Approaches to solving problems with both materials are presented, and a novel reduced mask process to fabricate high resolution, high aperture ratio 10.5” SXGA (1280 × 1024) displays is described. The process uses copper gate metallurgy with redundancy, without the need for extra processing steps. The resulting displays have 150 dpi color resolution, an aperture ratio of over 35%, and excellent image quality, making them the first high resolution displays that are suitable for notebook applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Wisnieff, R., “Numerical Simulation for Large-Area TFT-LCD's,”, Proc. of SID, Vol. XXIV, 1993, pp.731734.Google Scholar
2. Trube, J., Ocker, B., Bender, M., “Evaluation of Target Composition for Hillock-Free Aluminum Sputtering,” Proceedings of DisplayWorks 1998, pp. 6970.Google Scholar
3. Fryer, Peter M., “A High Resolution Copper Gate TFT/LCD Process,” Conference Record of the 1994 International Display Research Conference, pp. 146149.Google Scholar
4. Fryer, Peter M. et al. , “A Six Mask TFT-LCD Process Using Copper -Gate Metallurgy,” Journal of the Society for Information Display, Volume 5, Number 1, pp. 333336.Google Scholar