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High Deposition Rate Amorphous Silicon Alloy Xerographic Photoreceptor

Published online by Cambridge University Press:  28 February 2011

S.J. Hudgens  and
A.G. Johncock
S.J. Hudgens
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
A.G. Johncock
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

A new multilayer amorphous silicon alloy photoreceptor has been deposited at rates exceeding 36 µm/hr. using 2.45 GHz microwave glow discharge. The device whose structure is Al/a-Si:H:F (B-300)/a-Si:H:F (B-10)/a-Si:H:F:C is deposited in a powderless plasma deposition process which exhibits gas utilization efficiency approaching 100%. The xerographic performance of a 28µm device is: Vsat∼1100 V for a +7 KV corona; dark half decay time ≃5 sec; and photosensitivity ∼0.3 µJ/cm2 at λ = 650 nm. Stable, high quality xerographic images are obtained with these photoreceptors.

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References

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