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A High Depth Resolution Backside Secondary Ion Mass Spectrometry Technique Used for Studying Metal/Gaas Contacts

Published online by Cambridge University Press:  21 February 2011

C. J. Palmstrøm ,
S. A. Schwarz ,
E. D. Marshall ,
E. Yablonovitch ,
J. P. Harbison ,
C. L. Schwartz ,
L. Florez ,
T. J. Gmitter ,
L. C. Wang  and
S. S. Lau
C. J. Palmstrøm
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
S. A. Schwarz
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
E. D. Marshall
Affiliation:
Dept. of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093.
E. Yablonovitch
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
J. P. Harbison
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
C. L. Schwartz
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
L. Florez
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
T. J. Gmitter
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
L. C. Wang
Affiliation:
Dept. of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093.
S. S. Lau
Affiliation:
Dept. of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093.
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Abstract

Understanding metal/semiconductor contacts is important for the fabrication of device structures. To date most studies have been aimed at understanding the metallurgical or the electrical properties. Directly measuring the impurity concentrations immediately beneath a contact rather than inferring it from electrical measurements has up until now been difficult. This paper describes a backside SIMS technique which not only demonstrates the ability of measuring doping concentrations close to a metal/semiconductor contact but also is capable of measuring the consumption of semiconductor material during a metal/semiconductor reaction. The sample preparation technique can be used to enable backside profiling using other profiling techniques such as Auger and x-ray photoelectron spectroscopy depth profiling, Rutherford backscattering, and backside electrical evaluation. The Ge/Pd/GaAs solid phase ohmic contact is used to demonstrate the technique.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 283
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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