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High Photosensitivity Two-Photon Photoresists for Large Area Surface Microstructuring

Published online by Cambridge University Press:  19 September 2011

Robert J. DeVoe
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Tzu-Chen Lee
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Jeremy K. Larsen
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
David A. Ender
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Jennifer J. Sahlin
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Craig R. Sykora
Affiliation:
Electronic Markets and Materials Lab, 3M Co., St. Paul, MN 55144, U.S.A.
Cheryl A. Patnaude
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Matthew R. Atkinson
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Michael E. Griffin
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
Brian J. Gates
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
David H. Redinger
Affiliation:
Corporate Research Labs, 3M Co., 201-3N-05 3M Center, St. Paul, MN 55144, U.S.A.
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Abstract

Two-Photon initiated polymerization (TPIP) has shown great promise for fabrication of complex micro- and nano-structures. The method has been used to fabricate such structures over small areas (< 1 mm2) because of slow fabrication speeds and resulting long fabrication times. In order for TPIP to reach practical application in a commercial setting fabrication times need to be reduced by orders of magnitude. We report results on a highly photosensitive initiation system for photoresists based on free radical and cationic polymerization, where photosensitivity is increased 102- to 103-fold compared to previously reported photoinitiation systems. Threshold writing speeds are determined for critical exposure conditions, including laser power, type and concentration of photoinitiation system, and photoresist type. Surface roughness, a critical parameter in applications such as optics and microfluidics, for example, is also used to determine threshold writing speed. The utility of the approach is demonstrated by making a cell phone keypad light guide from a microreplication tool fabricated using the highly photosensitive photoresist.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Zhang, Y.-L., Chen, Q.-D., Xia, H., Sun, H.-B., Nano Today 5(5), 435448 (2010).Google Scholar
2. Rumi, M., Barlow, S., Wang, J., Perry, J. W., Marder, S. R., Adv. Polym. Sci., Springer-Verlag (2008), vol. 213:1-95 Google Scholar
3. Belfield, K. D., Yao, S., Bondar, M. V. Adv. Polym. Sci, Springer-Verlag (2008), vol. 213:97-156.Google Scholar
4. Stocker, M. P., Li, L., Gattass, R. R., Fourkas, J. T., Nature Chem. 3, 223227 (2011); T. S. Hsieh, C. W. B. Ng, K. Narayanan, A. C. A. Wan, J. Ying, Biomater. 31, 7648-7652(2010); K. Obata, J. Koch, U. Hinze, B. N. Chichkov, Opt. Express 18, 17193-17200 (2010).Google Scholar
5. Kato, J., Takeyasu, N., Adachi, Y., Sun, H.-B., Kawata, S. Appl. Phys. Lett. 86(4), 044102 (2005); P. R. Fleming, R. J DeVoe, N. A. Stacey, C. A. Leatherdale, R. D. DeMaster, T. A. Ballen, J. M Florczak, U.S. Patent Appl. Publ. US 2004/0012872 (22 January 2004).Google Scholar
6. Nielson, R., Kaehr, B., Shear, J. B. Small 1(1), 120125 (2009).Google Scholar
7. Reinhardt, B. A., Brott, L. L., Clarson, S. J., Dillard, A. G., Bhatt, J. C., Kannan, R., Yuan, L., He, G. S., Prasad, P. N. Chem. Mater. 10, 18631874 (1998).Google Scholar
8. Leatherdale, C. A., Schardt, C. R., Thompson, D. S., Thompson, W. L., U.S. Patent No. 7 265 161 (4 September 2007).Google Scholar
9. For more detailed description of the exposure apparatus see C. M. Marttila, C. D. Hoyle, C. A. Ender, J. B. Willoughby, R. J. DeVoe, U.S. Patent No. 7 941 013 (10 May 2011).Google Scholar
10. Reiser, A., Photoreactive Polymers: Science and Technology of Resists, J. Wiley and Sons, (1989).Google Scholar