Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-23T09:44:06.587Z Has data issue: false hasContentIssue false

High Quality 100 Å Thermal Oxide

Published online by Cambridge University Press:  28 February 2011

Thao N. Nguyen
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
Dawn L. Quinlan
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
Get access

Abstract

The growth of high quality 100 Å thermal oxide is investigated. Different growth conditions including oxidation temperature, oxidation rate, and gas ambient are explored and they all produce good oxides. However, it will be demonstrated that the best oxide with defect density as low as 0.2cm−2, breakdown field ≃ 12 MV/cm and good reproducibility is grown with low temperature (800°C) low rate oxidation in dry oxygen. The midgap interface trap density of this oxide is ∼ 2.0 × 1010eV−1cm−2 obtained from high-frequency and quasi-static C-V data. A model based on physical mechanisms controlling the kinetics of thin oxide growth is developed to understand how the quality of thin oxide is affected by growth conditions and to explain why the low temperature oxidation in dry oxygen yields the best film.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Han, Y., Mize, J., Mozden, T., O'Keefe, T., Pinto, J. and Worley, R., IEDM Technical Digest, San Francisco, CA, 1982, pp. 98102.Google Scholar
2. Baglee, D.A., 21st. Annual Proceedings Reliability Physics Symposium, Las Vegas, NEV, 1984, pp. 152155.Google Scholar
3. Morita, M., Aritome, S., Tsukude, M. and Hirose, M., IEDM Technical Digest, Washington, D.C., 1984, pp. 144147.Google Scholar
4. Raider, S.I., Gdula, R.A., and Petrak, J.R., Appl. Phys. Lett. 27, 150 (1975).Google Scholar
5. Weinberg, Z.A., Nguyen, T.N., Cohen, S.A., and Kalish, R., in Proceedings of MRS Symposium on Rapid Thermal Processing, Vol. 52, edited by Sedgwick, T.O, Seidel, T.E., and Tsaur, B-Y (1985) (in press).Google Scholar
6. Nguyen, T. N., Recent News Paper No. 701, ECS Spring Meeting, Boston, Massachusetts, May 4-9, 1986.Google Scholar
7. Bhattacharyya, A., Vorst, C., and Carim, A.H., J. Electrochem. Soc. 132, 1900 (1985).Google Scholar
8.To be published.Google Scholar
9. Dunham, S.T. and Plummer, J.D., J. Appl. Phys. 57, (1986).Google Scholar
10. Aubuchon, K.G., IEEE Trans. Nucl. Sci. NS–18, 117 (1971).Google Scholar
11. Holland, S. and Hu, C., Abst. No. 162, Extended Abstracts, Vol. 86–1, ECS Spring Meeting, Boston, Massachusetts, May 4-9, 1986.Google Scholar
12. Massoud, H.Z., Plummer, J.D., and Irene, E.A., J. Electrochem. Soc. 132, 2685 (1985).Google Scholar
13. Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).Google Scholar