Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-06-04T00:12:27.831Z Has data issue: false hasContentIssue false
  • English
  • Français

High Rate Deposition of a-SiNxH by VHF PECVD

Published online by Cambridge University Press:  15 February 2011

T. Takagi ,
Y. Nakagawa ,
Y. Watabe ,
K. Takechi  and
S. Nishida
T. Takagi
Affiliation:
ANELVA Corp., 5–8–1 Yotsuya, Fuchu, Tokyo, 183 Japan, LDW04656@niftyserve.or.jp
Y. Nakagawa
Affiliation:
ANELVA Corp., 5–8–1 Yotsuya, Fuchu, Tokyo, 183 Japan, LDW04656@niftyserve.or.jp
Y. Watabe
Affiliation:
ANELVA Corp., 5–8–1 Yotsuya, Fuchu, Tokyo, 183 Japan, LDW04656@niftyserve.or.jp
K. Takechi
Affiliation:
NEC Corp., 4–1–1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa, 216, Japan
S. Nishida
Affiliation:
NEC Corp., 4–1–1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa, 216, Japan
Get access

Abstract

Very High Frequency (VHF) has been applied to the plasma enhanced chemical vapour deposition (PECVD) of hydrogenated amorphous silicon nitride films (a-SiNx:H) to fabricate amorphous silicon (a-Si:H) thin film transistors (TFTs). Especially, the effect of the excitation frequency on the deposition rate and the film quality of a-SiNx.H deposited in a SiH4/NH3/N2 plasma has been investigated. The films were prepared by VHF (40 MHz and 60 MHz) and HF (13.56 MHz) plasma enhanced CVD.

The optical bandgap, the hydrogen content, the Si-H/N-H ratio and TFT mobility for films deposited in VHF plasma did not change significantly with the increase in deposition rate up to 300 nm/min. Internal stress could be constrained to acceptable levels at very high deposition rates. In contrast, the film quality deteriorated with an increase of the deposition rate in HF plasma. There seems to be a parallel relation between the optical emission intensity and the deposition rate which depends on the excitation frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 483
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sinha, A. K., Levinstein, H. J., Smith, T. E., Quintana, G. and Haszko, S. E., J. Electrochem. Soc. 125 (4), 601–608(1978)Google Scholar
2. Kuo, Y., Paloura, E. C. and Dziobkowski, C., Proc. of 10th Symp. on Plasma Processing, 513–524 (1996)Google Scholar
3. Kobayashi, I., Ogawa, T. and Hotta, S., Jpn. J. Appl. Phys. 31, 336–342 (1992)Google Scholar
4. Meiling, H., Westendorp, J. F. M., Hautala, J., Saleh, Z. M. and Malone, C. T., Mater. Res. Soc. Symp. Proc., (1994)Google Scholar
5. Curtins, H., Wyrsch, N. and Shah, A. V., Electron. Lett. 23 (5), 228–230 (1987)Google Scholar
6. Finger, F., Kroll, U., Viret, V., Shah, A., Beyer, W., Tang, X. -M., Weber, J., Howling, A. and Hollenstein, Ch., J. Appl. Phys. 71 (11), 5665–5674 (1992)Google Scholar
7. Howling, A. A., Dorier, J. -L., Hollenstein, Ch., Kroll, U. and Finger, F., J. Vac. Sci. Technol. A 10 (4), 1080–1085 (1991)Google Scholar
8. Oda, S., Plasma Sources Sci. Technol. 2, 26–29 (1993)Google Scholar
9. Heintze, M., Zedlitz, R. and Bauer, G. H., J. Phys. D: Appl. Phys. 26, 1781–1786 (1993)Google Scholar
10. Curtins, H., Wyrsch, N., Favre, M., Prasad, K., Brechet, M. and Shah, A. V., Mater. Res. Soc. Symp. Proc. 95, 249–253 (1987)Google Scholar
11. Kitamura, T., Nakano, N., Makabe, T. and Yamaguchi, Y., Plasma Sources Sci. Technol. 2, 40–45 (1993)Google Scholar
12. Surendra, M. and Graves, D. B., Appl. Phys. Lett. 59 (17), 2091–2093 (1991)Google Scholar
13. Takechi, K., Takagi, T., Nishida, S. and Kaneko, S., Proc. of AM-LCD (1996)Google Scholar
14. Lanford, W. A. and Rand, M. J., J. Appl. Phys. 49 (4), 2473–2477 (1978)Google Scholar
15. Yokoyama, S., Hirose, M. and Osaka, Y., Jpn. J. Appl. Phys. 20 (2), L117–L120 (1981)Google Scholar
16. Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 62 (4), 1406–1415 (1987)Google Scholar
17. Claassen, W. A. P., Valkenburg, W. G. J. N., Habraken, F. H. P. M. and Tamminga, Y., J. Electrochem. Soc. 130 (12), 2419–2423 (1983)Google Scholar
18. Claassen, W. A. P., Plasma Chem. and Plasma Proc. 7 (1), 109–124 (1987)Google Scholar