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High Resolution Observation and Image Simulation on Cleaved Wedges of III–V Semiconductors

Published online by Cambridge University Press:  21 February 2011

P.A. Buffat ,
J. D. Ganiere  and
P. Stadelmann
P.A. Buffat
Affiliation:
Institut de Micro-Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
J. D. Ganiere
Affiliation:
Institut Interdépartemental de Microscopie Electronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
P. Stadelmann
Affiliation:
Institut de Micro-Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Abstract

The observation of III–V multilayered semiconductors on 900 cleaved wedges is an interesting alternative to the conventional TEM observation on cross-sectioned samples. It offers a fast specimen preparation, the absence of ion irradiation damage or preferential etching, and a well controlled thickness across the sample. HREM observations are used to derive the layer thickness down to the atomic level. Image simulations were calculated with EMS programs on wedges described by a supercell.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 111
Copyright
Copyright © Materials Research Society 1989

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References

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