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Highly Strained (InAs)M/(GaAs)N MultipleQuantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates andTheir Application in Optical Switching

Published online by Cambridge University Press:  21 February 2011

R. M. Kapre ,
Kezhong Hu ,
Li Chen ,
S. Guha  and
A. Madhukar
R. M. Kapre
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, CA 90089-0241
Kezhong Hu
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, CA 90089-0241
Li Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, CA 90089-0241
S. Guha
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, CA 90089-0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, CA 90089-0241
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Abstract

We report the realization of (a) an optically bistable switch using astrained resonant tunneling diode (RTD) and (b) highly strained RTDsexhibiting simultaneously high peak current densities (Jp) andpeak-to-valley current ratios (PVR) suitable for high-speed electronicswitching. Both of these make use of RTDs with (InAs)M/(GaAs)N strained short period multiplequantum well regions with AlAs barriers in a triple-well, double barrierstructure. For the former, high contrast ratio (20:1) and an on statereflectivity of 46.5 % has been obtained at room temperature in an opticallybistable switch involving a strained InGaAs/GaAs (100) multiple quantum wellbased asymmetric Fabty-Perot reflection modulator, detector, and a strainedRTD and a Si field effect transistor. For the latter, we have obtained a Jp of 125 kA/cm2 with a PVR of 4.7 at roomtemperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 219
Copyright
Copyright © Materials Research Society 1992

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References

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