Highly transparent films with tailorable sheet resistivity were prepared by ion-beam sputtering of indium tin oxide (ITO) with MgF2 or SiO2 in the presence of high-purity air. Sheet resistivities of 103−101 ohms/square (ω/–) and visible transmittances as high as 92% (not corrected for substrate absorption) were obtained in films ∼30 nm thick. Resistivity increased by as much as two orders of magnitude in the first year after preparation; however, thicker films (e.g. 80 nm) were much more stable but somewhat less transparent. Preliminary data from exposure of film samples to atomic oxygen in a plasma asher indicate minimal degradation in optical properties. Heat-treating pure ITO in air produced transparent, slightly conductive films but with poorer stability of sheet resistivity in air than co-deposited ITO with either SiO2, or MgF2. Electrical transport measurements yielded new information on the electronic properties of ITO and related materials. These films show promise as low-absorption static bleedoff coatings for space photovoltaic arrays as well as CRT faceplates and other commercial applications.