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High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers
Published online by Cambridge University Press: 21 March 2011
Abstract
InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.
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- Copyright © Materials Research Society 2002
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