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High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures

Published online by Cambridge University Press:  10 February 2011

Rui Q. Yang ,
J. D. Bruno ,
J. L. Bradshaw ,
J. T. Pham  and
D. E. Wortman
Rui Q. Yang
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783-1197
J. D. Bruno
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783-1197
J. L. Bradshaw
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783-1197
J. T. Pham
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783-1197
D. E. Wortman
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783-1197
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Abstract

The interband cascade lasers (IC) represent a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.8-4 µm; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Also, these lasers were able to operate at temperatures up to 217 K, which is higher than the previous record (182 K) for an IC laser at this wavelength. We observed from several devices at temperatures above 80 K a slope efficiency of ∼800 mW/A per facet, corresponding to a differential external quantum efficiency of /500%. A peak optical output power exceeding 4 W/facet and peak power efficiency of /7% were observed from a device at 80 K. Also, we report the first cw operation of IC lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 101
Copyright
Copyright © Materials Research Society 2000

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