Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-11T04:30:26.760Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Quality A-Si Films Prepared by the Direct Photo-Cvd Method

Published online by Cambridge University Press:  25 February 2011

S. Nakano ,
K. Wakisaka ,
M. Kameda ,
M. Isomura ,
T. Matsuyama ,
N. Nakamura ,
S. Tsuda ,
M. Ohnishi  and
Y. Kuwano
S. Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
K. Wakisaka
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Kameda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Isomura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
T. Matsuyama
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
N. Nakamura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
S. Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Ohnishi
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
Y. Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
Get access

Abstract

A high-efficiency integrated-type a-Si solar cell submodule with a size of 10cm × 10cm has been fabricated and a total area efficiency of 9.6% is obtained by using a high-quality p-layer doped with B(CH3)3 We have developed an advanced direct photo-CVD method. High-quallt” a-SI films with low tail characteristic energy and low light-induced degradation is prepared by this method. We have also studied the role of Si-H2 bonds on the light-induced effect. The result implies that Si-H bonds stabilize the defect states, resulting in a large light-induced degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 417
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsuda, S. et al.: Jpn. J. Appl. Phys. 26 (1987) 33 CrossRefGoogle Scholar
2. Kuwano, Y. et al.: J. Non-Cryst. Solids 97 & 98 (1987) 289 CrossRefGoogle Scholar
3. Nakamura, N. et al.: AIP Conf. Proc. No. 120 (1984) 303CrossRefGoogle Scholar
4. Nakano, S. et al.: Proc. 19th IEEE Photovol. Spec. Conf. (1987) 678Google Scholar
5. Staebler, D. L. et al.: Appl. Phys. Lett. 39 (1981) 733 CrossRefGoogle Scholar
6. Nakamura, N. et al.: J. Non-Cryst. Solids 59 & 60 (1983) 1139 CrossRefGoogle Scholar