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High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid PhaseEpitaxy and Transient Annealing

Published online by Cambridge University Press:  25 February 2011

P.K. Vasudev ,
A.E. Schmitz  and
G.L. Olson
P.K. Vasudev
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
A.E. Schmitz
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

We report on a systematic study of the doping profiles resulting from rapidthermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initialsolid phase epitaxial regrowth followed by a brief (~5 sec) high temperature(1050ଌ) anneal produces extremely shallow (<1500Å) junctions with lowdefect concentrations. The quality of the epitaxial regrowth is verysensitive to implant conditions and impurity effects as deduced fromtime-resolved reflectivity measurements. Using the best conditions forimplantation and solid phase crystallization, we have obtained boron-dopedregions with sheet resistivities of 40 Ω/ and BF2-doped regionsof resistivity 60 Ω/.

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References

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