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Homogeneity of Thermally-Annealed Lightly Fe-Doped SI InP

Published online by Cambridge University Press:  10 February 2011

M. Avella ,
J. Jimenez ,
R. Fornari  and
E. De La puente
M. Avella
Affiliation:
Dpto. Física de la Materia Condensada, ETSI Industriales, 47011 Valladolid, Spain
J. Jimenez
Affiliation:
Dpto. Física de la Materia Condensada, ETSI Industriales, 47011 Valladolid, Spain
R. Fornari
Affiliation:
MASPEC-CNR, Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy
E. De La puente
Affiliation:
Dpto. Física de la Materia Condensada, ETSI Industriales, 47011 Valladolid, Spain
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Abstract

Lightly Fe-doped semiconducting InP samples have been rendered semi-insulating by thermal annealing and subsequently studied by Hall effect, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). Hall measurement shows that the semi-insulating conversion is generally associated to an improvement of the mobility. SPL and SPC measurements show that the distribution of both electrically active iron and compensation ratio is homogeneous after annealing. The cooling rate was seen to influence the compensation ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 111
Copyright
Copyright © Materials Research Society 2000

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