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Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

R. E. I. Schropp ,
K. F. Feenstra ,
C. H. M. Van Der Werf ,
J. Holleman  and
H. Meiling
R. E. I. Schropp
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, the Netherlands
K. F. Feenstra
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, the Netherlands
C. H. M. Van Der Werf
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, the Netherlands
J. Holleman
Affiliation:
MESA Research Institute, Department of Electrical Engineering, University of Twente, P.O. Box 217, 7500 AE Enschede, the Netherlands
H. Meiling
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, the Netherlands
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Abstract

We present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 109
Copyright
Copyright © Materials Research Society 1996

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References

1. Mahan, A.H., Carapella, J., Nelson, B.P., Crandall, R.S., and Balberg, I., J. Appl. Phys. 69, 6782 (1991).Google Scholar
2. Crandall, R.S., Mahan, A.H., Nelson, B.P., Vanecek, M., and Balberg, I., AIP Conf. Proc. 268, 81 (1992).Google Scholar
3. Mahan, A.H., Nelson, B.P., Salamon, S., and Crandall, R.S., J. Non-Cryst. Solids 137 & 138, 657 (1991).Google Scholar
4. Nelson, B.P., Iwaniczko, E., Schropp, R.E.I., Mahan, A.H., Molenbroek, E.C., Salamon, S., and Crandall, R.S., Proc. 12th International E.C. Photovoltaic Solar Energy Conference 1994, Eds. Hill, R., Palz, W., and Helm, P. (H.S. Stephens and Associates, 1994) p 679–682.Google Scholar
5. Iwaniczko, E., Nelson, B.P., Molenbroek, E.C., Schropp, R.E.I., Crandall, R.S., and Mahan, A.H., AIP Conf. Proc. 306, 458 (1993).Google Scholar
6. Mahan, A.H., Nelson, B.P., Iwaniczko, E., Wang, Q., Molenbroek, E.C., Asher, S.E., Reedy, R.C. Jr., and Crandall, R.S., 13th NREL PV Program Review Meeting, 1995.Google Scholar
7. Papadopulos, P., Scholz, A., Bauer, S., Schroeder, B., and Oechsner, H., J. Non-Cryst. Solids 164 – 166, 87 (1993).Google Scholar
8. Molenbroek, E., Johnson, E.J., and Gallagher, A.C., 13th European Photovoltaic Solar Energy Conference, 23–27 October 1995, Nice, France, Eds. Freiesleben, W., Palz, W., Ossenbrink, H.A. and Helm, P. (H.S. Stephens and Assoc., 1994) p319–;322.Google Scholar
9. Powell, M.J. and Orton, J.W., Appl. Phys. Lett. 45, 171 (1984).Google Scholar