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Hrem of Defects in Silicon at Twin Intersections

Published online by Cambridge University Press:  21 February 2011

C. J. D. Hetherington
C. J. D. Hetherington*
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, 1 Cyclotron Rd., Berkeley, CA 94720.
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Abstract

Defects found in and around intersections of deformation twins have been examined by high resolution electron microscopy. Experimental difficulties, especially local buckling of the crystal and radiation damage under the electron beam, lead to a need to interpret images of lattices tilted by almost a degree from the zone axis. This paper demonstrates the ability of image simulation programs to model successfully the scattering from a tilted crystal. It is shown how the generation of moir6 patterns between a lattice image and a reference array of dots offers a convenient method for extracting information about distortions of the lattice around defects.

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References

1. Wentorf, R.H. Jr. and Kasper, J.S., Science 139, 338 (1963)Google Scholar
2. Eremenko, V.G. and Nikitenko, V.I., Phys. Stat. Sol. (a) 14, 317 (1972)Google Scholar
3. Tan, T.Y., Foil, H. and Hu, S.M., Phil. Mag. A 44 127 (1981)Google Scholar
4. Pirouz, P., Chaim, R. and Samuels, J., Proc. 5th Intn. Congress on ‘The Structure and Properties of Dislocations in Semiconductors’, Moscow, U.S.S.R., March 1986. Bull. Acad. Sci. U.S.S.R.Google Scholar
5. Pirouz, P., Chaim, R., Dahmen, U. and Westmacott, K.H., submitted to Acta Met. (1989)Google Scholar
6. Pirouz, P., Chaim, R. and Dahmen, U. in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J. and Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, PA 1988) pp. 133–138 Google Scholar
7. Dahmen, U. Westmacott, K.H., Pirouz, P. and Chaim, R., submitted to Acta Met. (1989)Google Scholar
8. Dahmen, U., Hetherington, C.J.D., Pirouz, P. and Westmacott, K.H. submitted to Scripta Met. (1988)Google Scholar
9. Pirouz, P., Dahmen, U., Westmacott, K.H. and Chaim, R., submitted to Acta Met. (1989)Google Scholar
10. Pirouz, P., Yang, J., Ernst, F. and Möller, H.-J. in High Resolution Microscopy of Materials, edited by Krakow, W., Ponce, F.A. and Smith, D.J. (Mater. Res. Soc. Proc. 139, Pittsburgh, PA 1989) pp. 199–204 Google Scholar
11. Hetherington, C.J.D., Dahmen, U., Pirouz, P. and Westmacott, K.H., Proc. of the 47th Annual Meeting of the Electron Microscopy Society of America (EMSA), edited by G.W. Bailey, pp 132–133 (1988)Google Scholar
12. Hu, J.Z., Merkle, L.D., Menoni, C.S. and Spain, I.L., Phys Rev. B 34, 4679 (1987)Google Scholar
13. Yin, M.T. and Cohen, M.L., Phys. Rev. Lett. 45, 1004 (1980) and Phys. Rev. B 26, 5668 (1982)Google Scholar
14. Hetherington, C. J. D., Barry, J.C., Bi, J.M., Humphreys, C. J., Grange, J. and Wood, C. in Layered Structures. Epitaxv and Interfaces, edited by Gibson, J.M. and Dawson, L.R. (Mater. Res. Soc. Proc. 37, Pittsburgh, PA 1985) pp. 41–46 Google Scholar
15. Smith, D.J., Saxton, W.O., O'Keefe, M.A., Wood, G.J. and Stobbs, M., Ultramicroscopy 11, 263 (1983).Google Scholar
16. Bourret, A., Rouviere, J.L. and Penisson, J.M., Acta Cryst. A44, 838–847 (1988).Google Scholar
17. Kilaas, R., Proc. of the 45th Annual Meeting of EMSA, edited by Bailey, G.W. p66 (1987)Google Scholar
18. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. and Whelan, M.J. in Electron Microscopy of Thin Crystals, (Krieger 1979)Google Scholar
19. Moiré, Hercule, Journal de la Société Belge de Phénoménes Mystérieux 33 p17 (1850)Google Scholar