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HVPE GaN with Low Concentration of Point Defects for Power Electronics

Published online by Cambridge University Press:  13 February 2015

M. A. Reshchikov ,
J.D. McNamara ,
A. Usikov ,
H. Helava  and
Yu. Makarov
M. A. Reshchikov
Affiliation:
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA
J.D. McNamara
Affiliation:
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA
A. Usikov
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg, Russia
H. Helava
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA
Yu. Makarov
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA
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Abstract

We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.

Keywords

luminescencevapor phase epitaxy (VPE)semiconducting

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t05-05
Copyright
Copyright © Materials Research Society 2015 

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References

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