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Hydration Effect Analysis of Ion-sensitive Field Effect Transistor

Published online by Cambridge University Press:  01 February 2011

Lihong Jiao  and
Mykhaylo Rybachek
Lihong Jiao
Affiliation:
jiaoh@gvsu.edu, Grand Valley State University, School Of Engineering, Grand Rapids, United States
Mykhaylo Rybachek
Affiliation:
rybachem@mail.gvsu.edu, Grand Valley State University, School Of Engineering, Grand Rapids, United States
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Abstract

In this work, the drift of ISFET characteristics due to hydration effect was studied. The ISFETs were fabricated using the standard NMOS process. The AgCl reference electrode was fabricated with the electrolysis method. The ISFET modeling was carried out in MATLAB to study the time variation of surface potential and the drain-source current. In addition, the surface morphology and dielectric constant of silicon dioxide were tested to study the hydration effect in order to eliminate the drift. The dielectric constant of the gate oxide increases exponentially with hydration time. The surface morphology studied with the atomic force microscope (AFM) showed no significant change after immersion in water. It is believed that the main cause of the drift is the hydration effect, which is due to the change in dielectric constant of the sensing material and a small number of surface binding sites that react slowly to a change in pH.

Keywords

sensoroxidedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1253: Symposium K – Functional Materials and Nanostructures for Chemical and Bochemical Sensing , 2010 , 1253-K05-34
Copyright
Copyright © Materials Research Society 2010

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