Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T04:25:05.875Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen in Silicon-Unanswered Questions

Published online by Cambridge University Press:  28 February 2011

S. J. Pearton
S. J. Pearton*
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
Get access

Extract

The study of hydrogen in crystalline Si has enjoyed a resurgence of interest in recent times, principally because hydrogen is a common constituent of many semiconductor reagents, and also because of its ability to passivate the electrically activity of shallow acceptor dopants, and many deep contaminating centers in Si. This enables its use as a sensitive probe of the defect chemistry occurring in Si at relatively low temperatures – the presence of hydrogen can be detected electrically through the passivation of impurities and defects, and isotopic substitution with deuterium enables chemical analysis by secondary ion mass spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 11
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shi, T. S., Sahu, S. N., Oehrlein, G. S., Hiraki, A. and Corbett, J. W., Phys. Stat. Sol. A 74 329 (1982).Google Scholar
2. Baraff, G. A., private communication.Google Scholar
3. Tavendale, A. J., Alexiev, D. and Williams, A. A., Appl. Phys. Lett. 47 316 (1985).Google Scholar
4. Singh, V. A., Weigel, C., Corbett, J. W. and Roth, L. M., Phys. Stat. Sol. B 81 637 (1977).CrossRefGoogle Scholar
5. Katayama-Yoshida, H. and Shindo, K., J. Electron. Matl. 14a 773 (1985).Google Scholar
6. Mainwood, A. and Stoneham, A. M., J. Phys. C17 2513 (1984).Google Scholar
7. Assali, L. V. C. and Leite, J. R., Phys. Rev. Lett. 55 980 (1985).Google Scholar
8. Hall, R. N., J. Electron. Mater. 14a 759 (1984).Google Scholar
9. Pearton, S. J., Tavendale, A. J., Alexiev, D. and Williams, A. A. (to be presented at 5th International Symposium on Si Processing, ECS meeting, Boston, May 1986).Google Scholar