Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-04T15:22:09.374Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

Minhua Li  and
Q. Wang
Minhua Li
Affiliation:
Fairchild Semiconductor Corporation, FSSL 3333West, 9000 South, West Jordan, Utah 84088, U. S. A.
Q. Wang
Affiliation:
Fairchild Semiconductor Corporation, FSSL 3333West, 9000 South, West Jordan, Utah 84088, U. S. A.
Get access

Abstract

The defects caused by hydrogen ion (H+) implantation were studied for heavily arsenic (As), boron (B), and phosphorous (P) doped (100) silicon substrates. At the implantation energy of 170keV, H+ beam generates defect zones in both arsenic and boron doped silicon wafers. The width of implant damage zone in the heavily As-doped silicon increased from 138nm to 415nm when H+ ion implant dose increased from1×1016 ion//cm2 to 5×1016 ion/cm2, respectively. This dependence is however, opposite in the heavily B-doped substrate. The defect zone decreased with increasing H+ ion dose. The second ion mass spectrometry (SIMS) data show that in both heavily As- and P-doped silicon substrates, hydrogen distribution was governed by both H+-dopant pairing reaction and the amount of the crystal damage, whereas it is exclusively determined by pairing reaction in heavily B-doped silicon substrates. The atomic force microscope (AFM) measurement indicated that the rms roughness of the as-exfoliated surface was 18.86nm, 13.06nm, and 6.79nm for P-, As- and B-doped silicon substrates, respectively. An rms roughness improvement of 20nm-170nm was observed when wafers were annealed at 270°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.29
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Weber, J., “Defects Generation During Plasma Treatment of Semiconductor”, Hydrogen in Semiconductors, Sixth Trieste ICTP-IUPAP Semiconductor Symposium (1990), ed. Stutzmann, M. and Chevallier, J. (North-Holland 1991) pp. 201–217 Google Scholar
2 Usenko, A. Y., and Carr, W. N., “Hydrogen of Trap Layer as an SOI Process Step”, 2000 IEEE International SOI Conference, Oct. (2000)Google Scholar
3 Malleville, C., Aspar, B., Poumeyrol, T., Moriceau, H., Brule, M., Auberton-Herve, A., Barge, T., “Wafer Bonding and H-implantation Mechanisms Involved in the Smart-cut Technology”, Material Science and Engineering B, vol. 16, pp.14–19 (1997)Google Scholar
4 Tong, Q.–Y., Scholz, R., Gosele, U., Lee, T.-H., Huang, L.-J., Chao, Y.-L., Tan, T. Y., “Smartcut Approach to Low Temperature Silicon Layer Transfer”, Appl. Phys. Lett. Vol. 72, No. 1, p.49 (1998)Google Scholar
5 Bruel, M., “Silicon on Insulator Material Technology”, Electronics Letters, vol. 31, No. 14, pp. 1201–102 (1995)Google Scholar
6 Frend, L. B., Appl. Phys. Lett. 70, 3519 (1997)Google Scholar
7 Varma, C. M., Appl. Phys. Lett. 71, 3519 (1997)Google Scholar
8 Lee, J. K. and Nastasi, M., “Effect of Hydrogen Implantation Temperature on Ion-Cut of Silicon”, J. Appl. Phys. 96 (1) (2004)Google Scholar
9 Henttinen, K., Suni, T., Nurmela, A. and Suni, I., “Orientation and Boron Concentration Dependence of Silicon Layer Transfer by Mechanical Exfoliation”, Presentation from VTT Electronics (no publish time available)Google Scholar
10 Borenstein, T., J. W. and , Corbette and Pearton, S. J., “Kinetic Model for Hydrogen Reaction in Boron-doped Silicon”, J. Appl. Phys. 73 (6), 15 (1992)Google Scholar
11 Johnson, N. M., Ponce, F. A., Street, R. A. and Memanich, R. J., Phys. Rev. B35 (1987)Google Scholar
12 Ponce, F. A., Johnson, N. M., Tramotana, J. C. and Walker, J., IOP Conf. Ser. 871 (1987)Google Scholar
13 walle, C. H. Van de, “Theoretical Aspects of H in Crystalline Semiconductors”, Hydrogen in Semiconductors, Sixth Trieste ICTP-IUPAP Semiconductor Symposium (1990), ed. Stutzmann, M. and Chevallier, J. (North-Holland 1991) pp. 22–32 Google Scholar
14 Chevallier, J., Clerjaud, B., Dumas, J. M. and Savada, J. M., “Work Shop on Hydrogen Effects in InP and Related Compounds”, Lannion, France (1989)Google Scholar
15 Chevallier, J., Clerjaud, B. and Pajot, B., “Neutralization of Defects and Dopants in III-V Compound Semiconductors”, to be publishedGoogle Scholar
16 Pearton, S. J., Corbett, J. W. and Shi, T. S., Appl. Phys. A43 153 (1987)Google Scholar
17 Pearton, S. J., Corbett, J. W. and Borenstein, J. T., “Hydrogen Diffusion in Crystalline Semiconductors”, Hydrogen in Semiconductors, Sixth Trieste ICTP-IUPAP Semiconductor Symposium (1990), ed. Stutzmann, M. and Chevallier, J. (North-Holland 1991) pp. 85–97 Google Scholar
18 Schaefer, J. A., “Electronic and Structural Properties of Hydrogen on Semiconductor Surfaces”, Hydrogen in Semiconductors, Sixth Trieste ICTP-IUPAP Semiconductor Symposium (1990), ed. Stutzmann, M. and Chevallier, J. (North-Holland 1991) pp. 45–68 Google Scholar
19 Hochbauer, T., Misra, A., Nastasi, M., and Mayer, J. W., J. Appl. Phys. 89, 5980 (2001)Google Scholar
20 Cerofolini, G. F., Meda, L., Volpones, C., Ottaviani, G., Phys. Rev. B41, 12 607 (1990)Google Scholar