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Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

Jung Mok Jun ,
Kyu Chang Park ,
Sung Ki Kim ,
Kyung Ha Lee ,
Mi Kyung Chu ,
Min Koo Han ,
Young Hee Lee  and
Jin Jang
Jung Mok Jun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Kyu Chang Park
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Sung Ki Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Kyung Ha Lee
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Mi Kyung Chu
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Min Koo Han
Affiliation:
Seoul National University, Seoul 151-742, Korea
Young Hee Lee
Affiliation:
Jeonbuk National University, Jeonjoo 556-756, Korea
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
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Abstract

We have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 163
Copyright
Copyright © Materials Research Society 1993

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