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Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

D. G. Knight ,
C. J. Miner  and
A. Majeed
D. G. Knight
Affiliation:
Bell-Northern Research Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7
C. J. Miner
Affiliation:
Bell-Northern Research Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7
A. Majeed
Affiliation:
Bell-Northern Research Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7
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Abstract

High purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 249
Copyright
Copyright © Materials Research Society 1987

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References

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