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Identification of Growth Induced Planar Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

H. P. Strunk ,
A. Kessler  and
E. Bauser
H. P. Strunk
Affiliation:
Technische Universität Hamburg-Harburg, D-2100 Hamburg 90, FRG
A. Kessler
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, D-7000 Stuttgart 80M, FRG
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
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Abstract

Planar defects have been detected by transmission electron microscopy in silicon epitaxial layers that have been grown from Ga solutions below 500 °C. According to fringe contrast analysis, this defect can be modelled by a plane of Ga atoms within the Si lattice. This plane forms during crystal growth due to local preferential incorporation of Ga atoms at crystallographically defined sites, that occur repetitively in the trains of monomolecular growth steps at the liquid/solid growth interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 9
Copyright
Copyright © Materials Research Society 1986

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