Hostname: page-component-54dcc4c588-sq2k7 Total loading time: 0 Render date: 2025-09-28T00:55:28.122Z Has data issue: false hasContentIssue false
  • English
  • Français

Identification of the 0.15 eV Donor Defect in Bulk GaAs

Published online by Cambridge University Press:  22 February 2011

Z-Q. Fang ,
J. W. Hemsky  and
D. C. Look
Z-Q. Fang
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
J. W. Hemsky
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
Get access

Abstract

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Look, D. C., Walters, D. C., and Meyer, J. R., Solid State Commun. 42, 745 (1982).CrossRefGoogle Scholar
2. Siegel, W., Kühnel, G., Schneider, H. A., Witte, H., and Flade, T., J Appl. Phys. 69, 2245 (1991).CrossRefGoogle Scholar
3. Mitchel, W. C., Brown, G. J., and Rea, L. S., J. Appl. Phys. 71, 246 (1992).Google Scholar
4. Pons, D. and Bourgoin, J. C., J. Phys. C 18, 3839 (1985).CrossRefGoogle Scholar
5. Look, D. C., Appl. Phys. Lett. 51, 843 (1987).Google Scholar
6. Look, D. C., Yu, P. W., Theis, W. M., Ford, W., Mathur, G., Sizelove, J. R., Lee, D. H., and Li, S. S., Appl. Phys. Lett. 49, 1083 (1986).CrossRefGoogle Scholar
7. Baraff, G. A. and Schluter, M., Phys. Rev. Lett. 55, 2340 (1985).Google Scholar
8. Mitonneau, A. and Mircea, A., Solid State. Commun. 30, 157 (1979).Google Scholar
9. Fang, Z-Q. and Look, D. C., Appl. Phys. Lett. 59, 48 (1991).Google Scholar
10. Fang, Z-Q. and Look, D. C., Mater. Sci. Forum Vol. 83–87, 991 (1992).Google Scholar
11. Hariu, T., Sato, T., Komori, H., and Matsushita, K., J. Appl. Phys. 61, 1068 (1987).Google Scholar
12. Fischer, D. W., Phys. Rev. B37, 2968 (1988).CrossRefGoogle Scholar
13. Fang, Z-Q. and Look, D. C., J. Appl. Phys. 73, 4971 (1993).CrossRefGoogle Scholar
14. Mohapatra, Y. N. and Kumar, V., J. Appl. Phys. 644, 956 (1988).CrossRefGoogle Scholar
15. Look, D. C., Fang, Z-Q., and Sizelove, J. R., Phys. Rev. B47, 1441 (1993).CrossRefGoogle Scholar
16. Look, D. C., Fang, Z-Q., and Sizelove, J. R., to be published.Google Scholar
17. Kaminska, M. and Weber, E. R., Mater. Sci. Forum Vol. 83–87, 1033 (1992).CrossRefGoogle Scholar
18. Lang, D. V., Cho, A. Y., Gossard, A. C., Ilegems, M., and Wiegmann, W., J. Appl. Phys. 47, 2558 (1976).CrossRefGoogle Scholar
19. Mircea, A. and Bois, D., Inst. Phys. Conf. Ser. 46, 82 (1979).Google Scholar
20. Baraff, G. A. and Schluter, M., Phys. Rev. B33, 7346 (1986).Google Scholar