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Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

Published online by Cambridge University Press:  21 February 2011

D. Goyal ,
W. Ng ,
A. H. King  and
J. C. Bilello
D. Goyal
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook NY 11794-2275.
W. Ng
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook NY 11794-2275.
A. H. King
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook NY 11794-2275.
J. C. Bilello
Affiliation:
School of Engineering and Computer Science, California State University, Fullerton CA 92634.
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Abstract

We have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 39
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Srolovitz, D.J. and Anderson, M.P., Acta Met. 32, 1089 (1984).Google Scholar
2.Goyal, D., King, A.H. and Bilello, J.C., this volume.Google Scholar