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Identification of the Location of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells and Investigation on Their Properties

Published online by Cambridge University Press:  25 May 2012

Tatsuya Iwata ,
Yusuke Nishi  and
Tsunenobu Kimoto
Tatsuya Iwata
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan
Yusuke Nishi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto, Japan
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Abstract

Exact locations of conductive filaments formed in NiO-based resistive switching (RS) cells were detected by C-AFM, and their electrical as well as chemical properties were investigated. After a forming process, a part of top electrodes of Pt/NiO/Pt RS cells is deformed. NiO layers are also deformed, and conductive spots, i.e. filaments have been found preferentially along the edges of deformations. Detailed C-AFM investigation has revealed that variation of cell resistances originates from differences in size and shape of filaments, not their resistivity. Furthermore, cross-sectional TEM analysis has demonstrated that filaments determining cell resistance consist of reduced NiO with an inclusion of Pt.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e06-07
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Akinaga, H. and Shima, H., Proc. IEEE 98, 2237 (2010).Google Scholar
2. Gibbons, J. F. and Beadle, W. E., Solid-State Electron. 7, 785 (1964).Google Scholar
3. Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., Kim, M. and Hwang, C. S., Nature Nanotechnol. 5, 148 (2010).Google Scholar
4. Miao, F., Strachan, J. P., Yang, J. J., Zhang, M.-X., Goldfarb, I., Torrezan, A. C., Eschbach, P., Kelley, R. D., Medeiros-Ribeiro, G. and Williams, R. S., Adv. Mater. 23, 5633 (2011).Google Scholar
5. Iwata, T., Nishi, Y. and Kimoto, T., Jpn. J. Appl. Phys. 50, 081102 (2011).Google Scholar
6. Kondo, H., Arita, M., Fujii, T., Kaji, H., Moniwa, M., Yamaguchi, T., Fujiwara, I., Yoshimaru, M. and Takahashi, Y., Jpn. J. Appl. Phys. 50, 081101 (2011).Google Scholar
7. Yang, J. J., Miao, F., Pickett, M. D., Ohlberg, D. A. A., Stewart, D. R., Lau, C. N. and Williams, R. S., Nanotechnology 20, 215201 (2009).Google Scholar
8. Muenstermann, R., Menke, T., Dittmann, R. and Waser, R., Adv. Mater. 22, 4819 (2010).Google Scholar
9. Schroeder, H., Pandian, R. and Miao, J., Phys. Stat. Sol. A208, 300 (2011).Google Scholar
10. Lu, F.-H., Newhouse, M. L., Dieckmann, R. and Xue, J., Solid State Ion. 75, 187 (1995).Google Scholar