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The Impact of Device Asymmetry on the Electrical and Reliability Properties of Ferroelectric PZT for Memory Applications

Published online by Cambridge University Press:  15 February 2011

Jiyoung Kim ,
C. Sudhama ,
Vinay Chikarmane ,
Rajesh Khamankar ,
Jack Lee  and
Al Tasch
Jiyoung Kim
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
C. Sudhama
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
Vinay Chikarmane
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
Rajesh Khamankar
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
Jack Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
Al Tasch
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX78712.
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Abstract

The origin and the effects of asymmetrical electrical behavior in sputtered PZT (Zr/Ti=65/35) thin film capacitors with Pt electrodes have been studied. The asymmetry and constriction in the P-E hysteresis loops are understood to result from differences in mechanical stress at the top and bottom PZT/Pt interfaces because they experience different thermal cycles during fabrication. A method for correctly positioning asymmetric loops on the polarization axis is suggested. Both d.c. and a.c. electrical stressing (of either polarity) lead to hysteresis relaxation and symmetrization. A post-processing anneal leads to electrically symmetrical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 313
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Parker, L. and Tasch, A. F., IEEE Circuits and Devices Magazine, Jan. 1990, pp 17–26Google Scholar
2. Burfoot, and Taylor, , Polar dielectrics and their applications, (University of California Press, Berkeley and Los Angeles, 1979), p 39 Google Scholar
3. Miller, S. L. et al., Journal of Applied Physics, 70 (5), 2849 (1991)CrossRefGoogle Scholar
4. RT66A Ferroelectric Tester Operation Manual, Version 2.0, Radiant Technologies, Albuquerque, New Mexico.Google Scholar
5. Lee, J., et al., to be published in FerroelectricsGoogle Scholar
6. Chikarmane, V. et al., to be published in Jour. Vac. Sci. Tech. A, (1992)Google Scholar
7. Jaffe, B. et al., Piezoelectric Ceramics, (Academy Press, London, 1971), p167 Google Scholar
8. Touloukian, Y.S. et al (ed.) Thermophysical properties of matter Vol.12, (Plenum, New York, 1975) p 254 Google Scholar
9. Goodenough, J. B., private communication.Google Scholar