Hostname: page-component-54dcc4c588-b5cpw Total loading time: 0 Render date: 2025-09-15T08:47:39.398Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Polycrystalline Silicon Processing on Properties of MOS Memory Devices

Published online by Cambridge University Press:  21 February 2011

G. Queirolo ,
M. Brambilla  and
C. Mavero
G. Queirolo
Affiliation:
SGS-THOMSON Microelectronics, Agrate Brianza, Milano, Italy
M. Brambilla
Affiliation:
SGS-THOMSON Microelectronics, Agrate Brianza, Milano, Italy
C. Mavero
Affiliation:
SGS-THOMSON Microelectronics, Agrate Brianza, Milano, Italy
Get access

Abstract

In EEPROMs mèmory devices, tunnel oxides with high fluence, and interpoly oxides with low conductivity and high breakdown field are needed. Tunnel oxide fluence is degraded by high temperature annealing after the polysilicon deposition, while interpoly oxide is degraded by low temperature oxidation, particularly on rough films. As a consequence, a process optimization, giving a good compromise between these two quantities is required. In this work we shown that if a flat polysilicon is used, an interpoly oxide of good quality can be obtained at low temperature, maintaining a high value for the tunnel oxide fluence.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 269
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1- Ghidini, G. and Modelli, A., Insulating Films on Semiconductors, Simonne, J.J. and Buxo, J. Edrs., Elsevier Science Publisher, 1986, p. 141.Google Scholar
2- Queirolo, G., Ghidini, G., Meda, L., Signorini, C. and Armigliato, A., J. Elect-ochem. Soc., 133, 2381.10.1149/1.2108412Google Scholar
3- Queirolo, G., Manzini, S., Meda, L., Anderle, M., Canteri, R., Armigliato, A. and Frabboni, S., Surf. Interface Anal., 13,202(1988).10.1002/sia.740130406Google Scholar
4- Queirolo, G., Servida, E., Baldi, L., Pignatel, G., Armigliato, A., Frabboni, S. and Corticelli, F., J. Electrochem. Soc., 137,967(1990)10.1149/1.2086588Google Scholar
5- ASM Micro-electronics Technology Center, 3720 AC Bilthoven, The Netherlands.Google Scholar
6- Mulder, J.G., Eppenga, P., Hendriks, M. and Tong, J.E., J. Electrochem. Soc., 137, 273(1990)10.1149/1.2086381Google Scholar