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Impact of the Aggressive Scaling on the Performance of FinFETs: the Role of a Single Dopant in the Channel

Published online by Cambridge University Press:  18 July 2013

Manuel Aldegunde  and
Antonio Martinez
Manuel Aldegunde
Affiliation:
College of Engineering, Swansea University, Swansea SA2 8PP, U.K.
Antonio Martinez
Affiliation:
College of Engineering, Swansea University, Swansea SA2 8PP, U.K.
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Abstract

Non-equilibrium Green’s functions (NEGF) simulations are carried out to determine the impact of an unintentional dopant in the middle of the channel of a FinFET. We consider two different geometries scaled according to the ITRS and two different types of dopants, donors and acceptors. We show that there is a degradation of the subthreshold characteristics with the scaling of the smooth device and also a stronger impact of the stray dopants in the middle of the channel, with variations up to 32% in the current in on-state conditions.

Keywords

devicesdopantsimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 35 - 40
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Chiarella, T. et al. ., Solid-State Electron. 54, 855 (2010).CrossRefGoogle Scholar
ITRS. http://www.itrs.net/ Google Scholar
Aldegunde, M., Martinez, A., and Asenov, A., J. Appl. Phys. 110, 094518 (2011).CrossRefGoogle Scholar
Venugopal, R., Ren, Z., Datta, S., Lundstrom, M. S. and Jovanovic, D., J. App. Phys. 92, 3730 (2002).CrossRefGoogle Scholar
Martinez, A., Seoane, N., Brown, A. R. and Asenov, A.. “A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET”. In Proceedings of the SISPAD 2009 (2009).Google Scholar
Jin, S., Park, Y. J., and Min, H. S., J. Appl. Phys. 99, 123719 (2006).CrossRefGoogle Scholar