Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-23T14:46:43.900Z Has data issue: false hasContentIssue false
  • English
  • Français

The Importance of In Situ Monitors in the Preparation of Layered Oxide Heterostructures by Reactive MBE

Published online by Cambridge University Press:  10 February 2011

D.G. Schlom ,
J.H. Haenit ,
C.D. Theis ,
W. Tian ,
X.Q. Pan ,
G.W. Brown  and
M.E. Hawley
D.G. Schlom
Affiliation:
Department of Materials Science and Engineering, Penn State University, University Park, PA 16803-6602, schlom@ems.psu.edu
J.H. Haenit
Affiliation:
Department of Materials Science and Engineering, Penn State University, University Park, PA 16803-6602
C.D. Theis
Affiliation:
Department of Materials Science and Engineering, Penn State University, University Park, PA 16803-6602
W. Tian
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109-2136
X.Q. Pan
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109-2136
G.W. Brown
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
M.E. Hawley
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
Get access

Abstract

Using a variety of in situ monitors and when possible adsorption-controlled growth conditions, layered oxide heterostructures including new compounds and metastable superlattices have been grown by reactive molecular beam epitaxy (MBE). The heteroepitaxial layers grown include Bi4Ti3 O12—SrTiO3 and Bi4Ti3O12—PbTiO3 Aurivillius phases, Srn+1TinO3n+1 Ruddlesden-Popper phases, and metastable PbTiO3 / SrTiO3 and BaTiO3 / SrTiO3 superlattices. Accurate composition control is key to the controlled growth of such structures, and to this end combinations of reflection high-energy electron diffraction (RHEED), atomic absorption spectroscopy (AA), a quartz crystal microbalance (QCM), and adsorption-controlled growth conditions were employed during growth. The structural perfection of the films has been investigated using in situ RHEED, four-circle x-ray diffraction, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (TEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 105
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Molecular Beam Epitaxy: Applications to Key Materials, edited by Farrow, R.F.C. (Noyes, Park Ridge, 1995).Google Scholar
2 Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 12a, edited by Hellwege, K.-H. and Hellwege, A.M. (Springer-Verlag, Berlin, 1978), pp. 126–206.Google Scholar
3 Schlom, D.G., Theis, C.D., and Hawley, M.E. in Integrated Thin Films and Applications, edited by Pandey, R.K., Witter, D.E., and Varshney, U., Vol. 86 (American Ceramic Society, Westerville, 1998), pp. 41–60.Google Scholar
4 ATOMICAS ™. Intelligent Sensor Technology, Mountain View, CA.Google Scholar
5 Varian Vacuum Products, Lexington, MA.Google Scholar
6 Theis, C.D. and Schlom, D.G., J. Vac. Sci. Technol. A 14, 2677 (1996).Google Scholar
7 Theis, C.D. and Schlom, D.G. in High Temperature Materials Chemistry IX, edited by Spear, K.E., Vol. 97–39 (Electrochemical Society, Pennington, 1997), pp. 610–616.Google Scholar
8 Theis, C.D., Yeh, J., Schlom, D.G., Hawley, M.E., Brown, G.W., Jiang, J.C., and Pan, X.Q., Appl. Phys. Lett. 72, 2817 (1998).Google Scholar
9 Theis, C.D., Yeh, J., Schlom, D.G., Hawley, M.E., and Brown, G.W., Thin Solid Films 325, 107 (1998).Google Scholar
10 Theis, C.D., Lettieri, J., Spear, K.E., and Schlom, D.G., submitted to Appl. Phys. Lett.Google Scholar
11 The (100) SrTiO3 substrates were etched with a buffered-HF solution to achieve a TiO2-terminated surface using the processed developed by Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M., and Koinuma, H., Science 266, 1540 (1994).Google Scholar
12 Pseudocubic indices. At the film growth temperature LaAIO3 is cubic. However, on cooling to room temperature it transforms to rhombohedral. The substrate orientation is (110) for the rhombohedral axes.Google Scholar
13 Haeni, J.H., Theis, C.D., Trolier-McKinstry, S., Schlom, D.G., Tian, W., Pan, X.Q., Chang, H., Takeuchi, I., and Xiang, X.-D., submitted to Appl. Phys. Lett.Google Scholar
14 Schlom, D.G. and Harris, J.S. Jr,. in Molecular Beam Epitaxy: Applications to Key Materials, edited by R.Farrow, F.C. (Noyes, Park Ridge, 1995), pp. 505–622.Google Scholar
15 Haeni, J.H., Theis, C.D., and Schlom, D.G., J. Electroceram. 4, 399 (2000).Google Scholar
16 Ikeda, T., J. Phys. Soc. Jpn. 14, 1286 (1959).Google Scholar
17 Phase Diagrams for Ceramists, Vol. 1, edited by Levin, E.M., Robbins, C.R., and McMurdie, H.F. (American Ceramic Society, Columbus, 1964), p. 195.Google Scholar
18 Phase Equilibria Diagrams, Vol. 9, edited by Stringfellow, G.B. (American Ceramic Society, Westerville, 1992), pp. 126, 130.Google Scholar
19 Jiang, J.C., Pan, X.Q., Tian, W., Theis, C.D., and Schlom, D.G., Appl. Phys. Lett. 74, 2851 (1999).Google Scholar
20 Gutakovskii, A. K., Fedina, L. I., and Aseev, A. L., Phys. Status Solidi A 150, 127 (1995).Google Scholar
21 Thoma, S. and Cerva, H., Ultramicroscopy 53, 37 (1994).Google Scholar
22 Tian, W., Jan, D., Pan, X.Q., Haeni, J.H., and Schlom, D. G. (in preparation).Google Scholar
23 Aurivillius, B., Ark. Kemi 1, 463 (1950); 1, 499 (1950); 2, 519 (1951); 5, 39 (1953).Google Scholar
24 Aurivillius, B. and Fang, P.H., Phys. Rev. 126, 893 (1962).Google Scholar
25 Brown, G.W., Hawley, M.E., Theis, C.D., Yeh, J., and Schlom, D.G., submitted to J. Cryst. Growth.Google Scholar
26 Ruddlesden, S.N. and Popper, P., Acta Cryst. 10, 538 (1957); 11, 54 (1958).Google Scholar
27 Longo, J.M. and Raccah, P.M., J. Solid State Chem. 6, 526 (1973).Google Scholar
28 Tilley, R.J.D., J. Solid State Chem. 21, 293 (1977).Google Scholar
29 Kwestroo, W. and Paping, H.A.M., J. Am. Ceram. Soc. 42, 292 (1959).Google Scholar
30 McCarthy, G.J., White, W.B., and Roy, R., J. Am. Ceram. Soc. 52, 463 (1969).Google Scholar
31 Phase Diagrams for Ceramists 1969 Supplement, edited by Levin, E.M., Robbins, C.R., and McMurdie, H.F. (American Ceramic Society, Columbus, 1969), p. 93.Google Scholar
32 Cocco, A. and Massazza, F., Ann. Chim. (Rome) 53, 883 (1963).Google Scholar
33 Drys, M.' and Trzebiatowski, W., Roczniki Chem. 31, 489 (1957).Google Scholar
34 Udayakumar, K.R. and Cormack, A.N., J. Am. Ceram. Soc. 71, C–469 (1988).Google Scholar
35 Hendricks, S. and Teller, E., J. Chem Phys. 10, 147 (1942).Google Scholar
36 Grzinic, G., Philos. Mag. A 52, 161 (1985).Google Scholar
37 Tian, W., Pan, X.Q., Haeni, J.H., and Schlom, D.G., submitted to J. Mater. Res.Google Scholar
38 Szot, K., Freiburg, C., and Pawelczyk, M., Appl. Phys. A 53, 563 (1991).Google Scholar
39 Szot, K., Pawelczyk, M., Herion, J., Freiburg, C., Albers, J., Waser, R., Hulliger, J., Kwapulinski, J., and Dec, J., Appl. Phys. A 62, 335 (1996).Google Scholar