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The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

Published online by Cambridge University Press:  10 February 2011

I. Bork ,
A. v. Schwerin  and
Siemens AG
I. Bork
Affiliation:
Semiconductors, Munich, Germany
A. v. Schwerin
Affiliation:
Semiconductors, Munich, Germany
Siemens AG
Affiliation:
Semiconductors, Munich, Germany
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Abstract

In this article it is shown that the reactions between dopants and point defects in silicon are slow enough to play a significant role for low temperature transient enhanced diffusion (TED). As a consequence, diffusion models based on the assumption of local equilibrium between dopants and dopant-defect pairs highly overestimate TED at temperatures below 800°C. Without this assumption, i.e. when full dynamic pairing of dopants is included in simulations, good agreement to experimental results is achieved.

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References

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