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Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD

Published online by Cambridge University Press:  01 February 2011

Hongbo Li ,
Ronald H.J. Franken ,
Robert L. Stolk ,
C. H.M. van der Werf ,
Jan-Willem A. Schuttauf ,
Jatin K. Rath  and
Ruud E.I. Schropp
Hongbo Li
Affiliation:
h.li@phys.uu.nl, Utrecht University, Faculty of Science, Surfaces, Interfaces and devices, P.O.Box 80.000, Utrecht, 3508TA, Netherlands, ++31(30)2532345, ++31(30)2543165
Ronald H.J. Franken
Affiliation:
R.H.J.Franken@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
Robert L. Stolk
Affiliation:
R.L.Stolk@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
C. H.M. van der Werf
Affiliation:
C.H.M.vanderwerf@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
Jan-Willem A. Schuttauf
Affiliation:
j.a.schuttauf@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
Jatin K. Rath
Affiliation:
j.k.rath@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
Ruud E.I. Schropp
Affiliation:
R.E.I.Schropp@phys.uu.nl, Utrecht University, Surfaces, Interfaces and Devices, Faculty of Science, P.O.Box 80.000, Utrecht, 3508TA, Netherlands
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Abstract

The influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.

Keywords

Siphotovoltaicchemical vapor deposition (CVD) (deposition)

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