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Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer

Published online by Cambridge University Press:  17 March 2011

Takayoshi Takano ,
Hideo Kawanishi ,
Makoto Kurimoto ,
Yoshiyuki Ishihara ,
Masato Horie  and
Jun Yamamoto
Takayoshi Takano
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
Makoto Kurimoto
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
Yoshiyuki Ishihara
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
Masato Horie
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
Jun Yamamoto
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
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Abstract

BAlGaN and (BAlGaN/AlN) multi-quantum-wells (MQWs) structure were grown on 6H-SiC substrate by a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). Estimated boron compositions of the BAlGaN quantum wells by an Auger electron spectroscopy (AES) analysis were 0% to 13%. Photoluminescence (PL) spectra around 260 nm were observed at room temperature. The full-width at half maximum (FWHM) of PL spectra for BAlGaN/AlN MQW structure(with 2% of boron) was narrowed from 360 meV to 179 meV, as the residual strain in the BAlGaN well layer was decreased from 1.3% to 1.0% by increasing the Al content in the quantum wells.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.9
Copyright
Copyright © Materials Research Society 2001

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References

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