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Improved Stability of RF Glow Discharge Deposited a-Si:H Achieved by Hydrogen Dilution of Silane.

Published online by Cambridge University Press:  26 February 2011

R. C. van Dort ,
H. J. Geerts  and
J. C. van den Heuvel
R. C. van Dort
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
H. J. Geerts
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
J. C. van den Heuvel
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
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Abstract

The magnitude of metastable light-Induced degradation of intrinsic hydrogenated amorphous silicon films deposited by rf glow discharge from different selene-hydrogen mixtures wan studied. By stone of spacecharge-limited current measurements the Fermi-lava1 density of states was determined for as-grown and light-soaked n+-t-n+ devices. Films deposited using a mixture of 55 vol.% silane and 45 vol.% hydrogen and a relatively high rf power level of 62 mW/cm2 to obtain a high growth rate exhibited an improved stability with regard to light-Induced degradation of the film, compared with films grown under the conditions of using pure etlane and an rf power Just sufficient to seintaln the plasma, conditions known to ylald good quality films. The results are explained in terms of an improvement in the structural oraer of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 173
Copyright
Copyright © Materials Research Society 1988

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