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Improved Thermal Stability of Ultrathin CoSi2 Layers by Oxygen Annealing

Published online by Cambridge University Press:  10 February 2011

R. T. Tung  and
S. Ohmi
R. T. Tung
Affiliation:
Lucent Technologies Bell Labs., Murray Hill, N.J. 07974
S. Ohmi
Affiliation:
Lucent Technologies Bell Labs., Murray Hill, N.J. 07974
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Abstract

The thermal stability of thin CoSi2 layers is demonstrated to improve with the use of oxygen-containing annealing ambients. Layer agglomeration in epitaxial and polycrystalline CoSi2 layers grown on single crystal Si and polycrystalline CoSi2 layers grown on α-Si was retarded by oxygen annealing. A thin SiO2 layer grown during oxygen anneals which curbs surface diffusion and reduces the rates of kinetic processes is thought to be the primary reason for the improvement in CoSi2 thermal stability.

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